ANALYSIS OF THE SUBSTRATE EFFECT ON ENHANCEMENT-MODE SOI NMOSFET EFFECTIVE CHANNEL-LENGTH AND SERIES RESISTANCE EXTRACTION AT 77 K

In this work is presented an analysis of the substrate influences on t he effective channel length and series resistance extraction method in fully depleted enhancement-mode Silicon-On-Insulator (SOI) nMOSFETs o perating at nitrogen temperature. This analysis was supported by a com parison between the results obtained by MEDICI numerical bidimensional simulations results and by analytical expressions solution. The effec tive channel length extraction method is significantly influenced by t he substrate potential drop. However, the substrate influence on the s eries resistance extraction method can be considered negligible in all studied conditions.