TEMPERATURE-DEPENDENCE OF SIGE HBT STATIC AND DYNAMIC CHARACTERISTICS

The SiGe HBT is a good candidate for MIG, MMIC and high speed logic ci rcuits below 50GHz at ambient temperature and also at cryogenic temper ature. A static and dynamic analysis of abrupt junction SiGe HBTs is p resented in a wide range of temperatures, biases and frequencies up to 50GHz. The different transit times are investigated by analyzing the temperature dependence of the devices' static and HF properties betwee n 50K and 300K.