SI1-XGEX STRUCTURES FABRICATED BY FOCUSED ION-BEAM IMPLANTATION

Authors
GANETSOS T TSAMAKIS D PANKNIN D MAIR GLR TEICHERT J BISCHOFF L AIDINIS C
Citation
T. Ganetsos et al., SI1-XGEX STRUCTURES FABRICATED BY FOCUSED ION-BEAM IMPLANTATION, Journal de physique. IV, 8(P3), 1998, pp. 109-112
Citations number
11
Categorie Soggetti
Physics
Journal title
Journal de physique. IV → ACNP
ISSN journal
11554339
Volume
8
Issue
P3
Year of publication
1998
Pages
109 - 112
Database
ISI
SICI code
1155-4339(1998)8:P3<109:SSFBFI>2.0.ZU;2-B
Abstract
In this work we present a study of the spreading resistance for Si1-xG ex structures fabricated by F.I.B - L.M.I.S. technique. Maskless ion i mplantation using a Focused Ion Beam has the advantages of high resolu tion, the possibility to vary dose, energy and pattern design within a chip or within a structure.