SIGE HBT SIMULATION-BASED ON M(P) (T, N-A, X(GE)) NUMERICAL-MODEL HEM

Modeling of effective densities of states N-V,N-SiGe in heterojunction bipolar transistor is presented, based on accurate determination of h ole effective mass m(p). Algorithm for calculation of hole effective mass m(p) is presented, which is optimized for numerical device model ing. Corresponding Fortran subroutine named HEM is discussed, which ca lculates hole effective mass in the temperature range of T=77K-300K, b ase doping level bellow 10(20) cm(-3) and germanium content x(Ge)=0,00 -0,30. Finally, Fortran subroutine HEM is incorporated into numerical device simulator MEDICI and tested through simulation of idealized het erojunction bipolar transistor.