CALCULATION OF HOLE MOBILITIES IN RELAXED AND STRAINED SIGE BY MONTE-CARLO SIMULATION

Hole mobilities in relaxed and strained undoped SiGe layers have been calculated with a one-dimensional self-consistent bipolar Monte Carte simulation code. We have adopted a novel bandstructure model that inco rporates strain effects in the alloy valence band. Both alloying and s train enhance the hole mobility compared with bulk Si and we find that alloy scattering is the dominant scattering mechanism. An alloy poten tial of 1.4 eV was obtained by matching our Monte Carlo data on drift mobilities to experimental Hall mobility measurements. Uncertainties i n this value arise from scatter in the experimental data and a lack of detailed knowledge of the Hall factor.