M. Katsuno et al., MAGNETOTRANSPORT STUDY OF THE INTERSUBBAND SCATTERING IN AN SI DELTA-DOPED GAAS, Semiconductor science and technology, 13(7), 1998, pp. 739-745
The magneto-transport of an FET with a channel of an Si delta-doped Ga
As layer is studied at 4.2 K to reveal the transport properties in the
subband structure. The Shubnikov-de Haas effect is analysed as a func
tion of the gate bias voltage to estimate the variation of the electro
n density as well as the mobility in each subband. It is found that th
e carrier density decreases linearly as a function of the gate voltage
. The electron mobility in a given subband shows however an anomalous
nonlinear decrease, which is attributed to intersubband scattering.