PULSED-LASER DEPOSITION OF CARBON NITRIDE THIN-FILMS FROM GRAPHITE TARGETS

Citation
Y. Suda et al., PULSED-LASER DEPOSITION OF CARBON NITRIDE THIN-FILMS FROM GRAPHITE TARGETS, Carbon (New York), 36(5-6), 1998, pp. 771-774
Citations number
20
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
ISSN journal
00086223
Volume
36
Issue
5-6
Year of publication
1998
Pages
771 - 774
Database
ISI
SICI code
0008-6223(1998)36:5-6<771:PDOCNT>2.0.ZU;2-Z
Abstract
Carbon nitride thin films were synthesized on Si(100) substrates by a pulsed Nd:YAG laser deposition. The laser beam is incident on the high -purity graphite targets. The films are grown using an energy density 3.8 J cm(-2) at a laser repetition rate of 10 Hz. The nitrogen gas pre ssure in the chamber is 10.0 Pa. Morphology features of the films have been obtained by employing the technique of scanning electron microsc opy. Auger electron spectroscopy has been used to obtain compositional information about the films. The N/C composition ratio was found to v ary from zero to 0.32 depending on deposition conditions. IR absorptio n spectra show two characteristic bands: a broad band composed of the graphite G-band and disordered D-band of carbon, and another associate d with C=N triple bonds. Raman spectra have also been used to characte rize the films. (C) 1998 Elsevier Science Ltd. All rights reserved.