Carbon nitride thin films were synthesized on Si(100) substrates by a
pulsed Nd:YAG laser deposition. The laser beam is incident on the high
-purity graphite targets. The films are grown using an energy density
3.8 J cm(-2) at a laser repetition rate of 10 Hz. The nitrogen gas pre
ssure in the chamber is 10.0 Pa. Morphology features of the films have
been obtained by employing the technique of scanning electron microsc
opy. Auger electron spectroscopy has been used to obtain compositional
information about the films. The N/C composition ratio was found to v
ary from zero to 0.32 depending on deposition conditions. IR absorptio
n spectra show two characteristic bands: a broad band composed of the
graphite G-band and disordered D-band of carbon, and another associate
d with C=N triple bonds. Raman spectra have also been used to characte
rize the films. (C) 1998 Elsevier Science Ltd. All rights reserved.