INFLUENCE OF PROCESS PARAMETERS ON CNX FILMS OBTAINED BY LASER-CVD AT2 WAVELENGTHS

The carbon nitride (CN,) films have been prepared by infrared (IR, at 10.6 mu m) and ultraviolet (at 248 nm) laser induced chemical vapour d eposition (CVD) using different ethylene/nitrous oxide/ammonia mixture s. The partial concentration of ammonia in mixtures was varied in orde r to obtain a higher nitrogen incorporation in the deposited films. Th e changes induced in the gas-phase composition by the laser radiation in different experimental conditions were determined by IR transmissio n measurements. The film composition was studied by X-ray photoelectro n spectroscopy. The modification of the film chemical composition, spe cifically the dependence of the N/C ratio, on the irradiation waveleng th and on the reactants composition is described for the first time. ( C) 1998 Elsevier Science Ltd. All rights reserved.