ORGANIC MONOLAYERS ON SI(111) BY ELECTROCHEMICAL METHOD

Citation
P. Allongue et al., ORGANIC MONOLAYERS ON SI(111) BY ELECTROCHEMICAL METHOD, Electrochimica acta, 43(19-20), 1998, pp. 2791-2798
Citations number
29
Categorie Soggetti
Electrochemistry
Journal title
ISSN journal
00134686
Volume
43
Issue
19-20
Year of publication
1998
Pages
2791 - 2798
Database
ISI
SICI code
0013-4686(1998)43:19-20<2791:OMOSBE>2.0.ZU;2-G
Abstract
This work details the formation of organic monolayers on Si(111) by el ectrochemical methods. We show that grafting of phenyl groups is possi ble by reduction of N-+(2)-Ar-X cations where the substituent X may be Pr, NO2, COOH, CN, CnH2n + 1 (n = 1, 4, 12). Characterizations show t hat the electrochemical process is self stopped after completion of th e first monolayer whose structure is (2 x 1) close packed in the case X = Br and CH3 as observed by STM. The stability and passivating prope rties of films are also investigated. (C) 1998 Published by Elsevier S cience Ltd. All rights reserved.