Hd. Abruna et al., ANION AND ELECTRODE SURFACE-STRUCTURE EFFECTS ON THE DEPOSITION OF METAL MONOLAYERS - ELECTROCHEMICAL AND TIME-RESOLVED SURFACE DIFFRACTIONSTUDIES, Electrochimica acta, 43(19-20), 1998, pp. 2899-2909
The effects of anions and electrode surface structure on the UPD of me
tal monolayers are illustrated with three different examples. In the f
irst, we show that for Cu UPD on Pt[n(111) x (110)] (n = 2, 3, 5, 9 an
d 19) stepped surfaces in sulfuric acid medium, submonolayer amounts o
f underpotentially deposited copper induce the adsorption of (bi)sulfa
te in the vicinity of copper adatoms deposited on (110) step sites. Th
e induced anion adsorption increases with terrace width up to a three
Pt atoms wide terrace, suggesting that this is the minimum width to ac
commodate the copper adatom and the coadsorbed anion. In the second ca
se we present data from simultaneous time-resolved surface X-ray scatt
ering and chronoamperometric measurements of Cu UPD on Pt(111) electro
des in the presence of chloride anions. These studies demonstrate that
the kinetics of formation of the incommensurate CuCl adlayer from the
commensurate (1 x 1) Cu layer takes place in a much longer time scale
than the current response. This is a clear indication of the temporal
separation (resolution) between electrochemical events and processes
associated with surface reorganization to achieve long-range periodic
ordering. Finally, we consider the UPD of Hg on Au(111) electrodes wit
h emphasis on the relationship between the partial charge retained by
the mercury and anion adsorption. At the early stages of Hg UPD, when
mercury is still partially charged, an ordered mercurous-sulfate bilay
er structure is formed on the electrode surface. At more negative pote
ntials, where mercury is almost fully discharged, two additional order
ed hexagonal mercury adlayers are formed with little, if any, interact
ions with the anions, suggesting that the interactions between them ar
e largely electrostatic in nature. (C) 1998 Published by Elsevier Scie
nce Ltd. All rights reserved.