Citation
M. Itoh et al., ISLAND NUCLEATION AND GROWTH ON RECONSTRUCTED GAAS(001) SURFACES, Physical review letters, 81(3), 1998, pp. 633-636
Citations number
13
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
81
Issue
3
Year of publication
1998
Pages
633 - 636
Database
ISI
SICI code
0031-9007(1998)81:3<633:INAGOR>2.0.ZU;2-1
Abstract
The initial stages of homoepitaxy on GaAs(001) are studied with atomic
-resolution scanning tunneling microscopy and Monte Carlo simulations
that include the zinc blende structure of GaAs, the (2 x 4) reconstruc
tion of the (001) surface, and the kinetics of As-2 incorporation. The
reconstruction is found to favor nucleation on the top-layer arsenic
dimers and to cause small islands to be unstable until they adopt the
local (2 x 4) structure.