GROWTH OF GIANT MAGNETORESISTIVE SPIN VALVES WITH STRONG EXCHANGE BIAS FIELD

Citation
G. Choe et al., GROWTH OF GIANT MAGNETORESISTIVE SPIN VALVES WITH STRONG EXCHANGE BIAS FIELD, IEEE transactions on magnetics, 34(4), 1998, pp. 867-869
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
34
Issue
4
Year of publication
1998
Part
1
Pages
867 - 869
Database
ISI
SICI code
0018-9464(1998)34:4<867:GOGMSV>2.0.ZU;2-T
Abstract
FeMn based spin valves exhibiting high GMR ratio and, high exchange bi as field were fabricated by improving the interface roughness as well as the crystallographic texture. A highly oriented (111) NiFe free lay er deposited with substrate bias promoted strong (111) textures of Cu and FeMn while maintaining sharp interfaces, resulting in a high excha nge bias field, a high blocking temperature, and a high GMR ratio. The correlation between the interlayer coupling energy (J(free-pinned)) a nd the interface sharpness was studied as a function a Cu spacer thick ness for spin valves with free and pinned NiFe layers deposited under various bias conditions.