GEOMETRY-EFFECTS ON LOW-FREQUENCY NOISE IN GIANT MAGNETORESISTANCE (GMR) SENSORS

Citation
Afm. Nor et al., GEOMETRY-EFFECTS ON LOW-FREQUENCY NOISE IN GIANT MAGNETORESISTANCE (GMR) SENSORS, IEEE transactions on magnetics, 34(4), 1998, pp. 1327-1329
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
34
Issue
4
Year of publication
1998
Part
1
Pages
1327 - 1329
Database
ISI
SICI code
0018-9464(1998)34:4<1327:GOLNIG>2.0.ZU;2-9
Abstract
Microfabricated patterned NiFeCo/Cu GMR multilayers have been studied by varying device sensing area, A bridge sensor configuration was used to measure signal and noise as a function of the device size at room temperature, in a de magnetic field and with a de sense current. Wide- band noise from 0.1 Hz to 100 Hz was found to be field dependent for b oth easy and hard axis directions of applied bias field. The noise sho wed a broad peak which coincides with the highest signal sensitivity f or both easy and hard axis cases in agreement with work on other multi layer systems. The demagnetizing fields cause the peak signal to decre ase with stripe width. The signal to noise ratio was found to be propo rtional to the square root of the device area. Narrow-band fluctuation noise in the presence of an ac drive signal in these GMR devices was found to have a sharp peak near to zero de applied field. This was exp lained in terms of a spin-flop mechanism.