FT-IR spectroscopy have been used for identifying both the structure o
f BN and the intensity of the compressive stress in cubic boron nitrid
e (c-BN) film prepared by a unbalanced rf (13.56 MHz) magnetron sputte
ring of a hexagonal boron nitride target in a mixture argon and nitrid
e discharge. A T(temperature)- V(negative bias) phase diagram was obta
ined using the phase structure identify by IR spectra. Comparing the r
eflection infrared spectra (RIR) with the transmission infrared spectr
a (TIR) measured from same c-BN film, it is firstly found that RIR pea
k position of c-BN is lower than TIR peak position of c-BN, this means
that the compressive stress on the surface layer of c-BN film is smal
ler than that inside c-BN film, may be this is the reason why thicker
c-BN film can not be synthesized. A higher IR peak position of 1064 cm
(-1) and a lower peak position 1004.7 cm(-1) were detected from a brok
en and partly peeled off cBN film. The peak position of 1064 cm(-1) ag
rees with that of bulk c-BN at 1065 cm(-1) which was synthesized at hi
gh temperature and high pressure, while the peak position of 1004.7 cm
(-1) accords well with the result calculated(1004 cm(-1)) by Wentzcovi
th and it may be closes to that of the stress free value of c-BN. Usin
g the result measured by Ulrich, the shift rate of IR peak position of
c-BN in the films is about 3.8 cm(-1)/Gpa to be obtained.