MOLECULAR-DYNAMICS SIMULATION OF SILICON FILM GROWTH FROM CLUSTER BEAMS

Authors
XIE JQ FENG JY
Citation
Jq. Xie et Jy. Feng, MOLECULAR-DYNAMICS SIMULATION OF SILICON FILM GROWTH FROM CLUSTER BEAMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(1-2), 1998, pp. 77-82
Citations number
15
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
142
Issue
1-2
Year of publication
1998
Pages
77 - 82
Database
ISI
SICI code
0168-583X(1998)142:1-2<77:MSOSFG>2.0.ZU;2-K
Abstract
Silicon thin film growth from cluster beams has been investigated with molecular-dynamics simulations utilizing the Stillinger-Weber two- an d three-body interaction potential. The spreading of Si-atom clusters and the structure of grown films have been studied as a function of in cident cluster velocity. Higher surface diffusion and spreading of the deposited clusters was achieved with increasing cluster velocity. Epi taxial Si (1 1 1) growth was obtained under a moderate cluster velocit y. (C) 1998 Elsevier Science B.V. All rights reserved.