ANODIC BONDING OF LEAD-ZIRCONATE-TITANATE CERAMICS TO SILICON WITH INTERMEDIATE GLASS LAYER

Anodic bonding was investigated for bonding lead zirconate titanate (P ZT) ceramics to silicon wafers. Sputtered borosilicate glass was used as an intermediate layer. Well-bonded wafers were obtained by applying voltage of 300 V at 500 degrees C or 500 V at 400 degrees C. The bond ed area increased while applied voltage was kept constant. The size of the bonded area depended on the resistivity of the ceramics at bondin g temperatures. A cantilever was made with a PZT-Si bonded wafer, and its basic operation exhibited potential usefulness for application to microsensors and microactuators. (C) 1998 Elsevier Science S.A. All ri ghts reserved.