TRANSPORT-PROPERTIES OF FIBONACCI HETEROSTRUCTURES - A NONPARABOLIC APPROACH

A fourth order hamiltonian is used to explore transport properties of semiconductor Fibonacci heterostructures. The tunneling current and ti me delay are obtained for different Fibonacci sequences constructed wi th GaAs and AlxGa1-xAs. Energy minibands are calculated to study the f ractal dimension and critical electronic states in quasi-periodic arra ys. Results show that nonparabolic corrections produce changes in the tunneling current, time delay and fractal dimension, and a low voltage shift of the current peaks compared with the parabolic theory. The el ectronic states preserve their critical nature in the presence of nonp arabolic effects. (C) 1998 Academic Press.