ELECTRONIC-STRUCTURE OF MODULATION-DOPED HETEROSTRUCTURES - ELECTRIC-FIELD EFFECTS

Authors
ILAIWI KF ELKAWNI MI TOMAK M
Citation
Kf. Ilaiwi et al., ELECTRONIC-STRUCTURE OF MODULATION-DOPED HETEROSTRUCTURES - ELECTRIC-FIELD EFFECTS, Superlattices and microstructures, 24(1), 1998, pp. 61-67
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
24
Issue
1
Year of publication
1998
Pages
61 - 67
Database
ISI
SICI code
0749-6036(1998)24:1<61:EOMH-E>2.0.ZU;2-L
Abstract
Self-consistent energy levels of electrons in modulation-doped GaAs/Ga 1-xAlxAs heterostructures are presented and their dependence on variou s device parameters are examined. The results of the calculation of th e electric field effects on the shape of the confinement potential, th e electron concentration and the shape of the wavefunction are present ed. (C) 1998 Academic Press.