DETAILED BALANCE BETWEEN IMPACT IONIZATION AND AUGER RECOMBINATION OFTRIONS IN GAAS ALAS QUANTUM-WELLS/

Citation
A. Manassen et al., DETAILED BALANCE BETWEEN IMPACT IONIZATION AND AUGER RECOMBINATION OFTRIONS IN GAAS ALAS QUANTUM-WELLS/, Superlattices and microstructures, 24(1), 1998, pp. 75-78
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
24
Issue
1
Year of publication
1998
Pages
75 - 78
Database
ISI
SICI code
0749-6036(1998)24:1<75:DBBIIA>2.0.ZU;2-I
Abstract
We studied the photoluminescence of (e1:hh1)1S excitons (X) and negati vely charged excitons (trions, X-) in quantum wells (QWs) having a low density (n(e) < 5 x 10(10) cm(-2)) two-dimensional electron gas (2DEG ). Mixed type I-type II GaAs/AlAs quantum wells are studied in which t he 2DEG is photogenerated in the type I QWs and n(e) is determined by the excitation intensity. We find that, while for T less than or equal to 12 K, the X and X- relative intensities can be described as a syst em of two levels at equilibrium, it cannot be so described for T great er than or equal to 16 K. The most pronounced difference between the t wo temperatures is that for n(e) < 5 x 10(9) cm(-2), the X- intensity decreases with increasing n(e) in favor of the X intensity. This and o ther observations are interpreted as due to deviations from the detail ed balance between X- formation and annihilation processes required fo r thermodynamic equilibrium. (C) 1998 Academic Press.