INVESTIGATION OF THE MAGNETIC-FIELD DEPENDENCE OF ELECTRONIC AND OPTICAL-PROPERTIES IN ONE-SIDE MODULATION-DOPED GAAS-GA1-XALXAS QUANTUM-WELLS

The magnetic field dependence of the two-dimensional electron density, ground state energy, Fermi energy, photoluminescence transition energ y, and oscillator strength are systematically studied in GaAs-Ga1-xAlx As one-side modulation-doped quantum wells (QW's), Coupled Schrodinger and Poisson equations are solved self-consistently by means of the ex tended Fang-Howard variational approach, The calculation is performed within the effective mass approximation, considering finite well barri ers and assuming exchange-correlation correction of the conduction ban d edge. We found an oscillatory behavior, similar to the ordinary Shub nikov-De Haas oscillation, for the magnetic dependence of all properti es investigated. In particular, the calculated magnetic dependence of the oscillator strength is compared with experimental data.