Tg. Kim et al., PERFORMANCE OF GAAS-ALGAAS V-GROOVED INNER STRIPE QUANTUM-WELL WIRE LASERS WITH DIFFERENT CURRENT BLOCKING CONFIGURATIONS, IEEE journal of quantum electronics, 34(8), 1998, pp. 1461-1468
GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) laser
s grown by metalorganic chemical vapor deposition with different curre
nt blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n
blocking on n-substrate (VI(PN)(n)S) and p-blocking on n-substrate (VI
NS) have been fabricated and characterized, The VIPS QWW lasers show t
he most stable characteristics with effective current confinement: one
of the lasers shows fundamental transverse mode, lasing up to 5 mW/fa
cet, typical threshold current of 39.9 mA at 818.5 mn, an external dif
ferential quantum efficiency of 24%/facet, and characteristic temperat
ure of 92 K. The current tuning rate was almost linear at 0.031 nm/mA,
and the temperature tuning rate was measured to be 0.14 nm/degrees C,
Comparison of the light output versus current characteristics of the
lasers with different current blocking configurations is presented her
e.