In high ohmic pressure-type metallic point contacts (resistance range
50 Ohm to 3 k Ohm) the point-contact resistance is observed to switch
randomly between two or more discrete levels. This effect can be expla
ined by the motion or reorientation of single defects, thereby changin
g their cross section for electron scattering. From the temperature- a
nd voltage-dependence of the characteristic times of the fluctuations,
electromigration parameters for a defect in silver are extracted.