GROWTH OF BN BY HOT-FILAMENT ASSISTED ELECTRON-BEAM DEPOSITION

Thin films of BN were deposited using an electron beam for evaporating boron and a hot filament for activating N2. The IR spectrum of the de posited film on Si substrates showed a strong absorption at 1097 cm-1 clearly indicating a cubic structure. Scanning electron micrograph and x-ray diffraction patterns confirm the polycrystalline nature of the films. Raman spectra of the films showed peaks at 1056 and 1304 cm-1, which are the characteristic Raman lines for cubic boron nitride.