Ym. Mu et al., EFFECTS OF AN EXTERNAL MAGNETIC-FIELD ON SHALLOW DONOR LEVELS IN SEMICONDUCTORS, Physical review. B, Condensed matter, 48(15), 1993, pp. 10864-10869
An extension of Faulkner's method for the energy levels of the shallow
donor in silicon and germanium at zero field is made in order to inve
stigate the effects of a magnetic field upon the excited states. The e
ffective-mass Hamiltonian matrix elements of an electron bound to a do
nor center and subjected to a magnetic field B, which involves both th
e linear and quadratic terms of magnetic field, are expressed analytic
ally and matrices are solved numerically. The photothermal ionization
spectroscopy of phosphorus in ultrapure silicon for magnetic fields pa
rallel to the [1,0,0] and [1,1,1] directions and up to 10 T is explain
ed successfully.