PHONON RAMAN-SCATTERING IN INSB IN1-XALXSB STRAINED-LAYER SUPERLATTICES/

Citation
Vp. Gnezdilov et al., PHONON RAMAN-SCATTERING IN INSB IN1-XALXSB STRAINED-LAYER SUPERLATTICES/, Physical review. B, Condensed matter, 48(15), 1993, pp. 11228-11253
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
15
Year of publication
1993
Pages
11228 - 11253
Database
ISI
SICI code
0163-1829(1993)48:15<11228:PRIIIS>2.0.ZU;2-I
Abstract
Raman scattering has been used to study a variety of InSb/In1-xAlxSb s trained-layer superlattices grown by magnetron sputter epitaxy. The ob served frequencies of zone-folded longitudinal acoustic phonons agree well with those calculated using Rytov's theory of acoustic vibrations in layered media. The intensities of these phonons do not coincide wi th those calculated within the regime of the photoelastic mechanism fo r light scattering because the exciting light energy is close to reson ance with superlattice electronic transitions. The longitudinal optic phonons in In1-xAlxSb layers exhibit two-mode behavior and their shift due to the intralayer strain is discussed.