RESONANT RAMAN-SCATTERING IN AN INSB IN1-XALXSB STRAINED-LAYER SUPERLATTICE AND IN IN1-XALXSB EPILAYERS INSB/

Resonant Raman scattering was used to study an InSb/In1-xAlxSb straine d-layer superlattice and the InSb and In1-xAlxSb parent materials. Res onant enhancement peaks were observed in epilayer films in the regions of the E1 and E1 + DELTA1 optical gaps. In the superlattice, two sets of peaks observed in the plots of the Raman cross section versus exci ting photon energy are shown to originate from the independent electro nic transitions in the alternating layers. The calculated resonance Ra man profiles for two phonons in the alloy layers are in reasonable agr eement with experiment. Estimates of the strain and confinement effect s in these layers were made and these agree with the observed differen ces from the parent materials.