GALLIUM-ARSENIDE PIXEL DETECTORS

Citation
R. Bates et al., GALLIUM-ARSENIDE PIXEL DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 410(1), 1998, pp. 6-11
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
410
Issue
1
Year of publication
1998
Pages
6 - 11
Database
ISI
SICI code
0168-9002(1998)410:1<6:GPD>2.0.ZU;2-C
Abstract
GaAs detectors can be fabricated with bidimensional single-sided elect rode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the d esign features of the GaAs pixel detectors and results from a test per formed at the CERN SpS with a 120 GeV pi(-) beam. The detection effici ency was 99.2% with a nominal threshold of 5000e(-). (C) 1998 Elsevier Science B.V. All rights reserved.