R. Bates et al., GALLIUM-ARSENIDE PIXEL DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 410(1), 1998, pp. 6-11
GaAs detectors can be fabricated with bidimensional single-sided elect
rode segmentation. They have been successfully bonded using flip-chip
technology to the Omega-3 silicon read-out chip. We present here the d
esign features of the GaAs pixel detectors and results from a test per
formed at the CERN SpS with a 120 GeV pi(-) beam. The detection effici
ency was 99.2% with a nominal threshold of 5000e(-). (C) 1998 Elsevier
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