ELECTRIC-FIELD AND PLASMA EFFECTS ON PROTON-IRRADIATED GAAS DETECTOR PERFORMANCE

Authors
NAVA F VANNI P BIGGERI U VITTONE E LANZIERI C BERTUCCIO G CANALI C
Citation
F. Nava et al., ELECTRIC-FIELD AND PLASMA EFFECTS ON PROTON-IRRADIATED GAAS DETECTOR PERFORMANCE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 410(1), 1998, pp. 68-73
Citations number
24
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
410
Issue
1
Year of publication
1998
Pages
68 - 73
Database
ISI
SICI code
0168-9002(1998)410:1<68:EAPEOP>2.0.ZU;2-J
Abstract
The effect of the bulk damage on the detector performance was determin ed as a function of the non-ionising energy loss of high-energy proton s in semi-insulating GaAs. The study was performed by measuring the ch arge collection efficiency of gamma-rays, protons, beta- and alpha-par ticles on 24GeV/c proton irradiated detectors fabricated on Liquid Enc apsulated Czochralski grown GaAs. The results obtained let us explain the effect of the electric field strength and the plasma on the collec tion of the charge carriers. (C) 1998 Elsevier Science B.V. All rights reserved.