COHERENT PHONONS IN SEMICONDUCTORS AND SEMICONDUCTOR HETEROSTRUCTURES

Citation
T. Dekorsy et al., COHERENT PHONONS IN SEMICONDUCTORS AND SEMICONDUCTOR HETEROSTRUCTURES, Journal of nonlinear optical physics and materials, 7(2), 1998, pp. 201-213
Citations number
49
Categorie Soggetti
Physics, Applied",Optics
ISSN journal
02188635
Volume
7
Issue
2
Year of publication
1998
Pages
201 - 213
Database
ISI
SICI code
0218-8635(1998)7:2<201:CPISAS>2.0.ZU;2-5
Abstract
The impulsive excitation and phase-sensitive detection of coherent pho nons enable the study of dynamical properties of the lattice. In pump- probe experiments with femtosecond time resolution the amplitude and p hase of the coherent lattice motion can be detected with high sensitiv ity. Especially in semiconductors and semiconductor heterostructures, where a coherent phonon mode and free carriers are exited at the same time, important information about the carrier-phonon system far away f rom equilibrium is obtained. In bulk GaAs coherent plasmon-phonon mode s can be traced via the associated macroscopic field. In GaAs-AlGaAs b ased heterostructures coupled phonon-intersubband plasmons, coupled Bl och-phonon oscillations, and coherent acoustic phonons are observed.