T. Dekorsy et al., COHERENT PHONONS IN SEMICONDUCTORS AND SEMICONDUCTOR HETEROSTRUCTURES, Journal of nonlinear optical physics and materials, 7(2), 1998, pp. 201-213
The impulsive excitation and phase-sensitive detection of coherent pho
nons enable the study of dynamical properties of the lattice. In pump-
probe experiments with femtosecond time resolution the amplitude and p
hase of the coherent lattice motion can be detected with high sensitiv
ity. Especially in semiconductors and semiconductor heterostructures,
where a coherent phonon mode and free carriers are exited at the same
time, important information about the carrier-phonon system far away f
rom equilibrium is obtained. In bulk GaAs coherent plasmon-phonon mode
s can be traced via the associated macroscopic field. In GaAs-AlGaAs b
ased heterostructures coupled phonon-intersubband plasmons, coupled Bl
och-phonon oscillations, and coherent acoustic phonons are observed.