COHERENT EXCITON DYNAMICS IN GAAS-BASED SEMICONDUCTOR STRUCTURES

Citation
M. Colocci et al., COHERENT EXCITON DYNAMICS IN GAAS-BASED SEMICONDUCTOR STRUCTURES, Journal of nonlinear optical physics and materials, 7(2), 1998, pp. 215-226
Citations number
8
Categorie Soggetti
Physics, Applied",Optics
ISSN journal
02188635
Volume
7
Issue
2
Year of publication
1998
Pages
215 - 226
Database
ISI
SICI code
0218-8635(1998)7:2<215:CEDIGS>2.0.ZU;2-N
Abstract
We show that a very powerful tool in the investigation of the coherent exciton dynamics in semiconductors is provided by the study of the em itted light after resonant excitation from pairs of phase-locked femto second pulses. Under these conditions, not only the full dynamics of t he coherent transients (dephasing times, quantum beat periods, etc.) c an be obtained from linear experiments, but it can also be obtained a straightforward discrimination between the coherent or incoherent char acter of the emission by means of spectral filtering.