Rm. Bowman et Jm. Gregg, VO2 THIN-FILMS - GROWTH AND THE EFFECT OF APPLIED STRAIN ON THEIR RESISTANCE, Journal of materials science. Materials in electronics, 9(3), 1998, pp. 187-191
In this paper we report the synthesis and properties of various vanadi
um oxide phases. Thin films have been prepared using conventional puls
ed laser deposition (PLD). We have used both metallic V and ceramic V2
O5 targets to obtain the films. With both targets we have found that i
t is possible to move, in a controlled way, through several of the oxi
de states by changing the background oxygen gas pressure during deposi
tion. Significantly, over the range of deposition conditions investiga
ted we only observe the occurrence of the VO2, V6O13 and V2O5. This ob
servation is unusual because as many as thirteen oxidation states are
believed to exist. The temperature and strain dependence of film resis
tance was also investigated. VO2 films were found to undergo their met
allic to semiconducting phase transition at similar to 68 degrees C. T
he resistance change across this transition was found to be greater th
an four orders of magnitude. Further, in-plane tensile strains of 0.04
% were observed to change resistance values by similar to 35% near the
phase transition. (C) 1998 Chapman & Hall.