THIN-FILM FERROELECTRICS FOR CAPACITOR APPLICATIONS

Citation
D. Oneill et al., THIN-FILM FERROELECTRICS FOR CAPACITOR APPLICATIONS, Journal of materials science. Materials in electronics, 9(3), 1998, pp. 199-205
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
9
Issue
3
Year of publication
1998
Pages
199 - 205
Database
ISI
SICI code
0957-4522(1998)9:3<199:TFFCA>2.0.ZU;2-Q
Abstract
Pulsed laser deposition (PLD) has been used to fabricate simple thin f ilm capacitor structures with a variety of ferroelectric materials. Th in film capacitors using the conventional ferroelectric material BaxSr 1-xTiO3(BSTO) have been made across the entire compositional series. E lectrical characterization shows that in thin film form these ferroele ctrics display Curie point behaviour which is largely independent of c omposition. This contrasts sharply with bulk behaviour. The thin film fabrication and characterization of relaxer ferroelectric ceramics, su ch as Pb(Mg1/3Nb2/3)O-3(PMN) and Pb(Zn1/3Nb2/3)O-3-BaTiO3(PZN-BT), is also reported. (C) 1998 Chapman & Hall.