GROWTH MODE ISSUES IN EPITAXY OF COMPLEX OXIDE THIN-FILMS

Citation
B. Dam et B. Staublepumpin, GROWTH MODE ISSUES IN EPITAXY OF COMPLEX OXIDE THIN-FILMS, Journal of materials science. Materials in electronics, 9(3), 1998, pp. 217-226
Citations number
32
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
9
Issue
3
Year of publication
1998
Pages
217 - 226
Database
ISI
SICI code
0957-4522(1998)9:3<217:GMIIEO>2.0.ZU;2-V
Abstract
We discuss the hetero-epitaxy of complex oxides taking YBa2Cu3O7-delta as an example. Special emphasis is on films grown by pulsed laser dep osition (PLD), but other growth techniques are also discussed. Lattice mismatch in three directions is responsible for the fact that a real single crystalline YBa2Cu3O7-delta thin film has not yet been obtained . Nevertheless, growth features typically observed on single crystals (e.g. growth spirals as well as repeated nucleation and growth) are of ten found on YBa2Cu3O7-delta thin films. We discuss how surface diffus ion and supersaturation influence the surface morphology (as observed by atomic force and scanning tunnelling microcopies (AFM/STM)) of comp lex oxide thin films. In particular, we conclude that the kinetic ener gy of the impinging adatoms affects the surface diffusivity and theref ore the growth mode. (C) 1998 Chapman & Hall.