STRANSKI-KRASTANOW SELF-ORGANIZED GROWTH OF NANO-SCALE ZNTE ISLANDS ON (001)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

The Stranski-Krastanow (SK) growth by atmospheric pressure metalorgani c vapour phase epitaxy of self-organized ZnTe nanoislands on homoepita xial (001)GaAs is demonstrated. The - 7.4% lattice mismatch of the ZnT e/GaAs heterostructure leads to a strain driven distribution of nanosc ale ZnTe islands on top of a two-dimensionally (2D) grown wetting laye r. Atomic force microscopy and Rutherford backscattering spectrometry are used to determine the island dimensions, the ZnTe mean coverage an d the thickness of the 2D wetting layer. The island average density an d diameter, as well as their aspect ratio are about 520 mu m(-2), 13.6 nm and 0.20, respectively, in the case of a 1.20 monolayer (ML) thick wetting layer and a growth rate of 0.074 ML s(-1). Preliminary data o n the effects of different growth rates on the island average densitie s are also reported. (C) 1998 Chapman & Hall.