MICROMACHINED PLANAR SPIRAL INDUCTOR IN STANDARD GAAS HEMT MMIC TECHNOLOGY

Citation
Rp. Ribas et al., MICROMACHINED PLANAR SPIRAL INDUCTOR IN STANDARD GAAS HEMT MMIC TECHNOLOGY, IEEE electron device letters, 19(8), 1998, pp. 285-287
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
07413106
Volume
19
Issue
8
Year of publication
1998
Pages
285 - 287
Database
ISI
SICI code
0741-3106(1998)19:8<285:MPSIIS>2.0.ZU;2-Z
Abstract
A novel free-standing planar spiral inductor with reduced parasitic ca pacitances is proposed by suspending individually the strips, through a maskless front-side bulk micromachining compatible with a commercial GaAs HEMT monolithic microwave integrated circuit (MMIC) technology. Suspended structures have been fabricated and characterized at frequen cies up to 15 GHz, showing quality factors of up to 16 and self-resona nt frequency superior to 16 GHz for a 4.8 nH inductor, Moreover, since the standard IC process as well as the unconcerned electronic circuit s are not influenced by micromachining, such devices are directly usef ul to enhance RF circuits, like matching networks, filters, and low-no ise amplifiers.