GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/

We have demonstrated the first Ga2O3(Gd2O3) insulated gate n-channel e nhancement-mode In0.53Ga0.47As MOSFET's on InP semi-insulating substra te. Ga2O3(Gd2O3) was electron beam deposited from a high purity single crystal Ga5Gd3O12 source. The source and drain regions of the device were selectively implanted,vith Si to produce low resistance ohmic con tacts. A 0.75-mu m gate length device exhibits an extrinsic transcondu ctance of 190 mS/mm, which is an order of magnitude improvement over p reviously reported enhancement-mode InGaAs MISFET's. The current gain cutoff frequency, f(t), and the maximum frequency of oscillation, f(ma x) of 7 and 10 GHz were obtained, respectively, for a 0.75 x 100 mu m( 2) gate dimension device at a gate voltage of 3 V and drain voltage of 2 V.