EMPIRICAL INTERATOMIC POTENTIALS FOR NITRIDE COMPOUND SEMICONDUCTORS

Empirical interatomic potentials are determined for nitride compound s emiconductors such as AlN, GaN and InN. The versatility of these empir ical potentials is confirmed by the calculation of elastic constants f or AIN, GaN and InN, and by the calculation of excess energies for var ious monolayer superlattices. The results compare favorably with avail able results experimentally and empirically. These empirical potential s for nitride compound semiconductors are as accurate as those already existing in the literature for semiconductors.