ALIGNED CARBON NANOTUBE FILM SELF-ORGANIZED ON A SIC WAFER

An aligned carbon nanotube film was fabricated on the surface of an al pha-SiC wafer by heating at 1700 degrees C for 30 min. in a vacuum ele ctric furnace due to the decomposition of SiC by selected desorption. It was found to be easy to produce a large-area carbon nanotube film o n the SiC substrate. The (0002) lattice distance of graphite construct ing the CNTs was obtained to be 0.344 nm from the electron diffraction pattern.