SURFACE PROTRUSIONS OF CHEMICAL-VAPOR-DEPOSITED TIN FILMS CAUSED BY CU CONTAMINATION OF SILICON SUBSTRATES

We found that surface protrusions of chemical vapor deposited TiN film s are caused by reactions between copper-contaminants and the silicon substrate. Depending on the size of the copper contaminant, two kinds of defects were formed: copper silicide (CuSi) and silicon dioxide. Th e silicon dioxide is formed because of the catalytic role of copper si licide. The defects grow both into and out of the silicon substrate. I n the formation of copper silicide and silicon dioxide, copper, silico n, and oxygen are the major participating species.