NITROGEN DISTRIBUTION AND CHEMICAL BONDING STATE ANALYSES IN OXYNITRIDE FILM BY SPATIALLY-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY (EELS)

Nitrogen distribution and chemical bonding states in a multilayer (SiO 2/Si3N4/SiOxNy(oxynitride)/Si) are analyzed using spatially resolved e lectron energy loss spectroscopy (EELS). Multiple spectra of different points in a selected area are obtained simultaneously, and core-loss intensity and chemical bonding states are analyzed at each point. Nitr ogen is accumulated both at the oxynitride and silicon interface and i n the vicinity of oxide surface, and the nitrogen peak full widths at half-maximum (FWHM) are about 2 nm and 3.2 nm, respectively. The nitro gen-accumulated interface layer consists of two regions: the upper reg ion of the interface may have N-O bonds and the lower region consists of mainly nitrides. The EELS has spatial and energy resolutions of abo ut 1 nm and 0.1 eV, respectively.