STRUCTURAL-PROPERTIES OF AL1-XINXN TERNARY ALLOYS ON GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Al1-xInxN layers grown on GaN by metalorganic vapor phase epitaxy (MOV PE) have been structurally studied using omega and 2 theta-omega scans of X-ray diffraction (XRD) and a scanning electron microscope (SEM). Both omega and 2 theta-omega scans of XRD measurements revealed that A l0.83In0.17N, which is thought to be lattice-matched to GaN, has the s mallest full-width at half maximum. The surface morphology of Al0.83In 0.17N as observed by SEM was the smoothest among Al1-xInxN samples of various compositions.