SIGNIFICANT IMPROVEMENT IN BA1-XKXBIO3 GRAIN-BOUNDARY JUNCTIONS ON MGO BICRYSTAL SUBSTRATES BY MINIMAL BABIO3 SPUTTERING

Authors
WADA Y TAKAMI T KURODA K OZEKI T
Citation
Y. Wada et al., SIGNIFICANT IMPROVEMENT IN BA1-XKXBIO3 GRAIN-BOUNDARY JUNCTIONS ON MGO BICRYSTAL SUBSTRATES BY MINIMAL BABIO3 SPUTTERING, JPN J A P 2, 37(6B), 1998, pp. 725-727
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
37
Issue
6B
Year of publication
1998
Pages
725 - 727
Database
ISI
SICI code
Abstract
High quality Ba1-xKxBiO3 (BKBO) artificial grain boundary junctions we re fabricated on MgO (100) bicrystal substrates. We found that extreme ly-short-time sputtering of BaBiO3 (BBO) onto MgO substrate prior to B KBO deposition results in a marked improvement in the quality of the B KBO film. Utilizing this technique, a junction with J(c) = 6 kA/cm(2) and Delta V-g approximate to 1 mV at 4.2 K was fabricated. In addition , a junction with a high critical current density of J(c) = 78 kA/cm(2 ) was obtained.