IMPROVEMENT IN BA1-XKXBIO3 GRAIN-BOUNDARY JUNCTIONS BY AR+ BEAM IRRADIATION

To control the normal resistance of Ba1-xKxBiO3 (BKBO) artificial grai n boundary junctions, the influence of Ar+ beam irradiation on BKBO ju nctions on MgO (100) bicrystal substrates was investigated. Contrary t o our expectation, the properties of all junctions were found to be im proved. In the most marked changes, the critical current density incre ased from 2.3 kA/cm(2) to 31 kA/cm(2), while the normalized junction r esistivity decreased from 1.4 x 10(-6) Ohm.cm(2) to 1.4 x 10(-7) Ohm.c m(2). No change was observed in the gap voltages and the critical curr ent density of the BKBO films.