GAN BASED LASER-DIODE WITH FOCUSED ION-BEAM ETCHED MIRRORS

Authors
KATOH H TAKEUCHI T ANBE C MIZUMOTO R YAMAGUCHI S WETZEL C AMANO H AKASAKI I KANEKO Y YAMADA N
Citation
H. Katoh et al., GAN BASED LASER-DIODE WITH FOCUSED ION-BEAM ETCHED MIRRORS, JPN J A P 2, 37(4B), 1998, pp. 444-446
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
37
Issue
4B
Year of publication
1998
Pages
444 - 446
Database
ISI
SICI code
Abstract
A GaN based laser diode with Fabry-Perot resonator mirrors Fabricated by focused ion beam etching was demonstrated For the first time. It sh ows lasing by pulsed current injection at room temperature. The thresh old current and the lasing wavelength are 0.75 A and around 410 nm, re spectively.