Breakdown of non-conductive state of Corbino discs at integer filling
factors of Landau levels at high source-drain voltages has been measur
ed for samples fabricated from GaAs/Al0.3Ga0.7As heterostructures. Cri
tical breakdown electric fields at the filling factors of 1, 2, 4 and
6 are in agreement with the critical breakdown Hall electric fields in
the quantized Hall plateaus with these quantum numbers measured in bu
tterfly-type Hall bars. (C) 1998 Elsevier Science B.V. All rights rese
rved.