We report the experimental study of a system comprising two parallel q
uasi-one-dimensional (1D) ballistic wires formed in a GaAs-AlxGa1-xAs
double quantum well structure. A unique surface gate geometry allows t
he device to be tuned smoothly from a configuration comprising a pair
of vertically aligned 1D ballistic wires, to a single 1D ballistic wir
e in either the upper or lower 2DES. We investigate coupled ballistic
conduction in two samples with contrasting wire separations (35 and 30
0 Angstrom). The strongly coupled sample exhibits a cross-over from do
uble to single wire conduction as the number of occupied 1D subbands i
s reduced. The weakly coupled sample is used to observe directly varia
tions in the compressibility of a single ballistic channel arising fro
m the discrete 1D density of states. (C) 1998 Elsevier Science B.V. Al
l rights reserved.