A non-planar two-dimensional electron gas (2DEG) has been realised by
using molecular beam epitaxy to grow a high mobility heterostructure o
n a (1 0 0) n(+)-GaAs layer selectively etched to create a two-dimensi
onal array of cavities through the n(+)-GaAs which are bounded by high
er-index facets. Far-infrared (FIR) cyclotron resonance spectra show o
ne absorption mode associated with an electron gas formed inside the c
avities and confined in both lateral directions. Typical confinement e
nergies of 23 cm(-1) and widths of 1000 nm are derived from the FIR sp
ectra and magneto resistance measurements. A second mode occurs at a f
requency lower than that measured for a planar 2DEG. Its origin is dis
cussed in terms of magneto-plasmons excited across a non-planar region
of the electron gas in a spatially non-uniform magnetic held. Combini
ng this information with atomic force microscopy images provides a com
prehensive picture of the nature of the lateral confinement in this st
ructure. (C) 1998 Elsevier Science B.V. All rights reserved.