MOBILITY OF SURFACE ELECTRONS OVER THE HE-3-HE-4 MICROSTRATIFIED SOLUTION

Citation
Ss. Sokolov et al., MOBILITY OF SURFACE ELECTRONS OVER THE HE-3-HE-4 MICROSTRATIFIED SOLUTION, Physica. B, Condensed matter, 251, 1998, pp. 672-675
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
251
Year of publication
1998
Pages
672 - 675
Database
ISI
SICI code
0921-4526(1998)251:<672:MOSEOT>2.0.ZU;2-U
Abstract
We have calculated the ripplon-limited mobility of electrons localized over the He-3-He-4 solution, whose surface contains a thin film enric hed with He-3, by taking into account viscous damping in the evaluatio n of the dispersion relation of interfacial modes. We have considered the electron-ripplon scattering from the low-damped capillary-like mod e, which is similar to that of ripplons in uniform liquid. The tempera ture dependence of the electron mobility is shown for some values of t he film thickness. The mobility is also calculated for electrons over pure bulk 3He and an excellent agreement is found with the experimenta l results. (C) 1998 Elsevier Science B.V. All rights reserved.