SUBBAND STRUCTURE AND ANOMALOUS VALLEY SPLITTING IN ULTRA-THIN SILICON-ON-INSULATOR MOSFETS

Authors
OUISSE T MAUDE DK HORIGUCHI S ONO Y TAKAHASHI Y MURASE K CRISTOLOVEANU S
Citation
T. Ouisse et al., SUBBAND STRUCTURE AND ANOMALOUS VALLEY SPLITTING IN ULTRA-THIN SILICON-ON-INSULATOR MOSFETS, Physica. B, Condensed matter, 251, 1998, pp. 731-734
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
251
Year of publication
1998
Pages
731 - 734
Database
ISI
SICI code
0921-4526(1998)251:<731:SSAAVS>2.0.ZU;2-D
Abstract
Shubnikov-de Haas oscillations have been investigated in Silicon-on-in sulator MOSFET's with silicon film thicknesses down to 3 nm, The lifti ng of the valley degeneracy may reach 20 meV. This anomalous valley sp litting is tentatively attributed to a combination of a higher quantum confinement and a rough back interface. (C) 1998 Elsevier Science B.V . All rights reserved.