ELECTRON CONFINEMENT IN (ORDERED)GAINP2 GAAS/(ORDERED)GAINP2 SINGLE-QUANTUM-WELL/

Citation
J. Zeman et al., ELECTRON CONFINEMENT IN (ORDERED)GAINP2 GAAS/(ORDERED)GAINP2 SINGLE-QUANTUM-WELL/, Physica. B, Condensed matter, 251, 1998, pp. 735-739
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
251
Year of publication
1998
Pages
735 - 739
Database
ISI
SICI code
0921-4526(1998)251:<735:ECI(GS>2.0.ZU;2-0
Abstract
Quantum confinement of electrons in a series of undoped (ordered)GaInP 2/GaAs/(ordered)GaInP2 single quantum well (QW) samples was studied by magnetophotoluminescence measurements. The electron confinement is ob served only in the sample with two thin GaP barriers inserted on both sides of the GaAs QW. The excitonic photoluminescence peak related to the transition between confined electron and hole states does not exac tly obey the B cos(Theta) law in the tilted magnetic field which is ex plained by the quasi-two-dimensional nature of electrons confined in t he well by partially transmitting GaP barriers. (C) 1998 Elsevier Scie nce B.V. All rights reserved.